Growth process and surface structure of MnSi on Si(1 1 1)

Surface Science

Volumn 603, Issue 1, 2009, Pages 226-231

  Suto, Hirofumi ^a   Imai, Keita ^a   Fujii, Shunjiro ^a   Honda, Shin ichi ^a   Katayama, Mitsuhiro ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Ion scattering spectroscopy; Manganese silicides; Surface structure, morphology, roughness, topography; Thin film structures

Indexed keywords

ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; ATOMS; DESORPTION; ENGINEERING GEOLOGY; EPITAXIAL GROWTH; GROWTH (MATERIALS); HETEROJUNCTION BIPOLAR TRANSISTORS; IONS; MANGANESE; MANGANESE COMPOUNDS; PLASMA INTERACTIONS; SCATTERING; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON; SURFACE MORPHOLOGY; SURFACE STRUCTURE; SURFACE TOPOGRAPHY; THIN FILM DEVICES; THIN FILMS;

ATOMIC FORCES; CAICISS; COLLISION ION SCATTERING SPECTROSCOPIES; CRYSTALLOGRAPHIC ORIENTATION RELATIONSHIPS; EQUILIBRIUM STATES; GROWTH PROCESSES; ION SCATTERING SPECTROSCOPY; ISLAND GROWTHS; MANGANESE SILICIDES; MN ATOMS; MNSI FILMS; PSEUDOMORPHIC STRUCTURES; ROOM TEMPERATURES; THIN FILM STRUCTURES;

CRYSTAL ATOMIC STRUCTURE;

EID: 58049180689     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.11.008     Document Type: Article

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