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Surface Science

Volumn 382, Issue 1-3, 1997, Pages 258-265

The formation of Mn/Si(111) interface at room and high temperatures

(5) Shivaprasad, S M a Anandan, C a Azatyan, S G b Gavriljuk, Y L c Lifshits, V G c

a NATIONAL PHYSICAL LABORATORY (India)

b FAR EASTERN FEDERAL UNIVERSITY (Russian Federation)

c RUSSIAN ACADEMY OF SCIENCES (Russian Federation)

Author keywords

Auger electron spectroscopy; Chemisorption; Compound formation; Electron energy loss spectroscopy; Epitaxy; Low energy electron diffraction; Manganese; Silicon

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHEMISORPTION; DEPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; LOW ENERGY ELECTRON DIFFRACTION; MANGANESE; SILICON; SURFACE STRUCTURE;

MANGANESE SILICIDE;

MONOLAYERS;

EID: 0031164568 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00161-1 Document Type: Article

Times cited : (40)

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