High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12, 1998, Pages 6556-6561

  Matsuda, Koji ^a   Tatsuoka, Hirokazu ^a   Matsunaga, Kazuharu ^a   Isaji, Koji ^a   Kuwabara, Hiroshi ^a   Brown, Paul D ^b   Xin, Yan ^b,c   Dunin Borkowski, Rafal ^b,d   Humphreys, Colin J ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^d ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Epitaxy; Interdiffusion; MnSb; MnSi; TEM

Indexed keywords

ANTIMONY; CRYSTAL LATTICES; CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; INTERDIFFUSION (SOLIDS); PHASE INTERFACES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING MANGANESE COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; THERMAL EFFECTS;

LATTICE MISMATCH;

SEMICONDUCTING FILMS;

EID: 0032289590     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6556     Document Type: Article

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