Enhancing noise margins of finFET SRAM by integrating vth- controllable flexible-pass-gates

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Volumn , Issue , 2008, Pages 146-149

  Endo, Kazuhiko ^a   O'Uchi, Shin Ichi ^a   Ishikawa, Yuki ^a   Liu, Yongxum ^a   Matsukawa, Takashi ^a   Masahara, Meishoku ^a   Sakamoto, Kunihiro ^a   Tsukada, Junichi ^a   Ishii, Kenichi ^a   Yamauchi, Hiromi ^a   Suzuki, Eiichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS;

FINFETS; NOISE MARGINS; SRAM CELLS; WRITE MARGINS;

STATIC RANDOM ACCESS STORAGE;

EID: 58049086111     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2008.4681720     Document Type: Conference Paper

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