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Volumn , Issue , 2008, Pages 216-219

3.6mW, 30dB gain preamplifiers for an FM-UWB receiver

Author keywords

FM UWB; High band ultrawideband; High gain low power preamplifier; Low data rate; SiGe:C BiCMOS technology; Wireless personal area networking

Indexed keywords

AMPLIFIERS (ELECTRONIC); BROADBAND NETWORKS; COMMUNICATION CHANNELS (INFORMATION THEORY); RADIO RECEIVERS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SILICON ALLOYS; TECHNOLOGY; TELECOMMUNICATION SYSTEMS; WIRELESS NETWORKS;

EID: 57949085566     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2008.4662747     Document Type: Conference Paper
Times cited : (6)

References (8)
  • 2
    • 57949094123 scopus 로고
    • Single-to-differential converter,
    • US patent, no. 5,404,054, April 4
    • B. Nauta, "Single-to-differential converter," US patent, no. 5,404,054, April 4, 1995.
    • (1995)
    • Nauta, B.1
  • 5
    • 20144387956 scopus 로고    scopus 로고
    • QUBIC4X: A fT/fmax=130/140GHz SiGe:C-BiCMOS Manufacturing Technology with Elite Passive for Emerging Microwave Applications
    • Montreal, Canada, pp, Sept
    • P. Deixler, A. Rodriguez, W. Boer, and H. Sun, et al., "QUBIC4X: A fT/fmax=130/140GHz SiGe:C-BiCMOS Manufacturing Technology with Elite Passive for Emerging Microwave Applications," IEEE-BCTM, Montreal, Canada, pp. 233-236, Sept. 2004.
    • (2004) IEEE-BCTM , pp. 233-236
    • Deixler, P.1    Rodriguez, A.2    Boer, W.3    Sun, H.4
  • 7
    • 1042266066 scopus 로고    scopus 로고
    • An 8.2-GHz, 14.4mW, 1.6dB NF SiGe Bipolar LNA with DC current reuse
    • Sept
    • G. Gramegna, A. Magliarisi, and M. Paparo, "An 8.2-GHz, 14.4mW, 1.6dB NF SiGe Bipolar LNA with DC current reuse," IEEE-BCTM, pp. 49-52, Sept. 2003.
    • (2003) IEEE-BCTM , pp. 49-52
    • Gramegna, G.1    Magliarisi, A.2    Paparo, M.3
  • 8
    • 34247391533 scopus 로고    scopus 로고
    • A compact, ESD-Protected, SiGe BiCMOS LNA for Ultra-Wideband Applications
    • May
    • K. Bhatia, S. Hyvonen, and E. Rosenbaum, "A compact, ESD-Protected, SiGe BiCMOS LNA for Ultra-Wideband Applications," IEEE Journal of Solid-State Circuits, vol. 42, no. 5, pp. 1121-1130, May 2007.
    • (2007) IEEE Journal of Solid-State Circuits , vol.42 , Issue.5 , pp. 1121-1130
    • Bhatia, K.1    Hyvonen, S.2    Rosenbaum, E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.