Self-doping effects in epitaxially grown graphene

Applied Physics Letters

Volumn 93, Issue 24, 2008, Pages

  Siegel, D A ^a,b   Zhou, S Y ^a,b   El Gabaly, F ^b   Fedorov, A V ^b   Schmid, A K ^b   Lanzara, A ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; LANDFORMS;

DOPING EFFECTS; EPITAXIALLY GROWN; GRAPHENE; LOW ENERGIES; LOW ENERGY ELEC-TRONS; PHOTOEMISSION SPECTROSCOPIES; QUASI PARTICLES; SINGLE LAYERS; TERRACE WIDTHS;

SOIL CONSERVATION;

EID: 57849163622     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3028015     Document Type: Article

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