Selective formation of silicon nanowires on pre-patterned substrates

Applied Surface Science

Volumn 255, Issue 6, 2009, Pages 3752-3758

  Wan, LiJuan ^a   Gong, WenLi ^a   Jiang, KeWei ^a   Li, HuiLin ^a   Tao, BaiRui ^a   Zhang, Jian ^a  

^a Key Laboratory of Brain Functional Genomics   (China)

Author keywords

Electroless metal deposition; Etch rate; Lithography patterning; Ratio of length to width; Silicon nanowires

Indexed keywords

NANOWIRES; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; VAPOR DEPOSITION;

ELECTROLESS METAL DEPOSITION; ETCH RATES; LENGTH-TO-WIDTH RATIO; PATTERNED SUBSTRATES; RATIO OF LENGTH TO WIDTHS; SELECTIVE FORMATION; SILICON NANOWIRES; SILICON SUBSTRATES;

SUBSTRATES;

EID: 57849141694     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.10.025     Document Type: Article

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