The gating efficiency of single-molecule transistors

Journal of Computational and Theoretical Nanoscience

Volumn 3, Issue 6, 2006, Pages 951-956

  Kaun, Chao Cheng ^a   Seideman, Tamar ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

Fullerene junction; Gating efficiency; Molecular electronics; Nonequilibrium green function approach; Single molecule transistor

Indexed keywords

CALCULATIONS; ELECTRODES; ELECTRON TUNNELING; FULLERENES; MOLECULAR ELECTRONICS; MOLECULAR ORBITALS; MOLECULES; REFRACTORY METAL COMPOUNDS;

CONTACT COUPLINGS; COUPLING STRENGTHS; FIRST-PRINCIPLES CALCULATION; GATING EFFICIENCY; NON-EQUILIBRIUM GREEN FUNCTIONS; SINGLE-MOLECULE TRANSISTOR; SOURCE AND DRAIN ELECTRODES; SOURCE-DRAIN ELECTRODES;

EFFICIENCY;

EID: 57749116724     PISSN: 15461955     EISSN: None     Source Type: Journal    
DOI: 10.1166/jctn.2006.3082     Document Type: Article

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