Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films

Applied Physics Letters

Volumn 93, Issue 23, 2008, Pages

  D'Angelo, D ^a   Romano, L ^a   Crupi, I ^a   Carria, E ^a   Privitera, V ^b   Grimaldi, M G ^a  

^a UNIVERSITY OF CATANIA   (Italy)

^b CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; EPITAXIAL FILMS; GALLIUM; GERMANIUM; PHOSPHORUS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON;

CHARGED DEFECTS; DIFFERENT EFFECTS; DOPANT CONCENTRATIONS; DOPANT SPECIES; DOPED SI; ENERGY LEVELS; EPITAXIAL REGROWTHS; EXPERIMENTAL DATUMS; LARGE RANGES; RATE VARIATIONS; SI FILMS; SOLID PHASE EPITAXIAL REGROWTHS; TIME-RESOLVED;

DOPING (ADDITIVES);

EID: 57649131043     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3036899     Document Type: Article

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