Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's

Solid-State Electronics

Volumn 43, Issue 1, 1999, Pages 123-129

  Chiang, T K ^a   Wang, Y H ^a   Houng, M P ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000888066     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00240-8     Document Type: Article

References (32)

1. Marshall JD, Meindl JD. IEEE Trans Electr Devices 1988;35(3):388.
2. Chattopadhyay SN, Pal BB. IEEE Trans Electr Devices 1989;36(1):81.
3. Chen Q, Willander M, Carter J, Thaki CH, Evans ERA. Electr Lett 1993;29(8):671.
4. Georagkilas A, Halkias G, Christou A, Papavassiliou C, Perantinus G, Konstantinidis G, Panayotatos P. IEEE Trans Electr Devices 1993;40(3):507.
5. Haldar S, Manneesha, Khanna MK, Gupta RRS. IEEE Trans Electr Devices 1994;41(9):1674.
6. Nulman J, Faricelli JV, Krusius JP, Frey J. IEEE Trans. Electr Devices 1983;30(10):1395.
7. Ram GV, Elmasry MI. IEEE Electr Devices Lett 1980;1(12):259.
8. Magnusson U, Tiren J, Soderbarg A, Rosling M, Grelsson O, Bleichner H, Nylander JO, Berg S. Electr Lett 1989;25(9):565.
9. Tove PA, Bohlin K, Masszi F, Norde H, Nylander J, Tiren J, Magnusson. IEEE Electr Device Lett 1988;9(1):47.
10. Hartgring CD, Rosario BA, Pickett JM. IEEE J Solid-St Circuits 1981;16(5):578.
11. MacWiliams KP, Plummer JD. IEEE Trans Electr Devices 1991;38(12):2619.
12. Tosaka Y, Suzuki K, Sugii T. IEEE Electr Device Lett 1994;15(11):466.
13. Veeraraghavan S, Fossum JG. IEEE Trans Electr Devices 1989;36(3):522.
14. Young KK. IEEE Trans Electr Devices 1989;36(2):399.
15. Balestra F, Benachir M, Brini J, Ghibaudo G. IEEE Trans Electr Devices 1990;37(11):2302.
16. Joachim H-O, Yamaguchi Y, Ishikawa K, Inoue Y, Nishimura T. IEEE Trans Electr Devices 1993;40(10):1812.
17. Tokunaga K, Sturm JC. IEEE Trans Electr Devices 1992;39(10):2413.
18. Vogt H, Burbach G, Beiz J, Zimmer G. Electr Lett 1989;25(23):1580.
19. Hou C-S, Wu C-Y. IEEE Trans Electr Devices 1995;42(12):2156.
20. De VK, Meindl D. IEEE J Solid-St Circuits 1993;28(2):169.
21. Agrwal B, De VK, Pimbley JM, Meindl JD. IEEE J Solid-St Circuits 1994;29(2):122.
22. Marshall JD, Meindl JD. IEEE Trans Electr Devices 1988;35(3):373.
23. Technology Modeling Associate, Inc., TMA MEDICI: Two-dimensional device simulation program.
24. Fikry W, Ghibaudo G, Dutoit M. Electr. Lett. 1994;30(11):911.
25. Hsiao TC, Woo JCS. IEEE Trans Electr Devices 1995;42(42):1120.
26. Maa J-J, Wu C-Y. IEEE Trans Electr Devices 1995;42(8):1487.
27. Tsai J-Y, Sun J, Yee KF, Osburn CM. IEEE Electr Device Lett 1996;17(7):33.
28. Vuong H-H, Rafferty CS, Eshraghi SA, Lentz JL, Zeitoff PM, Pinto MR, Hillenius SJ. IEEE Trans Electr Devices 1996;43(7):1144.
29. Chang CTM, Vrotsos T, Frizzell MT, Carroll R. IEEE Electr Device Lett 1987;8(2):69.
30. Conger J, Peczalski A, Shur MS. IEEE Electr Device Lett 1988;9(3):128.
31. Joachim HO, Yamaguchi Y, Ishikawa K, Inoue Y, Nishmura T. IEEE Trans Electr Devices 1993;40(10):1812.
32. Hsiao TC, Woo JCS. IEEE Trans Electr Devices 1995;42(6):1120.