Modified boundary condition at Si-SiO2 interface for modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's

Solid-State Electronics

Volumn 49, Issue 1, 2005, Pages 141-143

  Jit, S ^a   Pandey, Prashant ^a   Kumar, Abhishek ^a   Gupta, Shailendra Kumar ^a  

^a BANARAS HINDU UNIVERSITY   (India)

Author keywords

DIBL; SOI MESFET; Subthreshold voltage

Indexed keywords

BOUNDARY CONDITIONS; ELECTRIC CHARGE; ELECTRIC FIELDS; POISSON EQUATION; PROBLEM SOLVING; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

CHARGE DENSITY; DEVICE SIMULATION; MESFET; ORTHOGONALITY;

SEMICONDUCTING SILICON;

EID: 9544230705     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.06.012     Document Type: Article

References (4)

1. Chiang TK, Wang YH, Houng MP. Solid-State Electron 1999;43:123-9.
2. Marshal JD, Meindl JD. IEEE Trans Electron Dev 1988;35: 373-83.
3. ATLAS Device Simulation Software, SILVACO International, Santa Clara, CA 95054.
4. Pandey P, Pal BB, Jit S. IEEE Trans Electron Dev 2004;51.