A new 2-D model for the potential distribution and threshold voltage of fully depleted short-channel Si-SOI MESFETs

IEEE Transactions on Electron Devices

Volumn 51, Issue 2, 2004, Pages 246-254

  Pandey, Prashant ^a   Pal, B B ^a   Jit, S ^a  

^a BANARAS HINDU UNIVERSITY   (India)

Author keywords

Bottom potential; Drain induced barrier lowering (DIBL); Short channel silicon on insulator (SOI) MESFETs; Threshold voltage

Indexed keywords

ELECTRIC POTENTIAL; MESFET DEVICES; NUMERICAL METHODS; POISSON EQUATION; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; TWO DIMENSIONAL;

DRAIN INDUCED BARRIER LOWERING; POTENTIAL DISTRIBUTION FUNCTIONS; SHORT CHANNEL TRANSISTORS;

SEMICONDUCTOR DEVICE MODELS;

EID: 0442326800     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.822225     Document Type: Article

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