Technological issues for high-density MRAM development

Journal of Magnetism and Magnetic Materials

Volumn 282, Issue 1-3, 2004, Pages 232-236

  Kim, Taewan ^a   Kim, Young Keun ^b   Park, Wanjun ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Korea University   (South Korea)

Author keywords

Magnetic tunnel junction; Magnetoreistance; Magnetoresistive random access memory

Indexed keywords

CMOS INTEGRATED CIRCUITS; CORRELATION METHODS; MAGNETIC FIELDS; MAGNETIC MOMENTS; OPTIMIZATION; RANDOM ACCESS STORAGE; TRANSISTORS; TUNNEL JUNCTIONS;

CORE CELLS; MAGNETIC TUNNEL JUNCTIONS; MAGNETORESISTIVE RANDOM ACCESS MEMORY; RADIATION HARDNESS;

MAGNETORESISTANCE;

EID: 5744246336     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2004.04.052     Document Type: Conference Paper

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