Determination of critical thickness for defect formation of CdSe/ZnSe heterostructures by transmission electron microscopy and photoluminescence spectroscopy

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 12, 2008, Pages 2892-2897

  Litvinov, D ^a   Schowalter, M ^b   Rosenauer, A ^b   Daniel, B ^a   Fallert, J ^a   Loffler W ^a   Kalt, H ^a   Hetterich, M ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CDSE/ZNSE; CONSTANT VALUES; CRITICAL THICKNESSES; DEFECT FORMATIONS; DENSITY OF DEFECTS; GAAS(001) SUBSTRATE; HETEROSTRUCTURES; HIGH RESOLUTIONS; LATTICE FRINGES; LAYER THICKNESSES; MOLECULAR-BEAM EPITAXIES; NOMINAL THICKNESSES; RED SHIFTS;

ASTROPHYSICS; AUGER ELECTRON SPECTROSCOPY; CADMIUM; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CRYSTAL GROWTH; CRYSTALS; DEFECT DENSITY; DEFECTS; ELECTRON MICROSCOPES; GALLIUM ALLOYS; LIGHT EMISSION; LUMINESCENCE; MILITARY PHOTOGRAPHY; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; POLLUTION; SEMICONDUCTING ZINC COMPOUNDS; ZINC ALLOYS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 57349143740     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200824151     Document Type: Article

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