Crystallization of amorphous-silicon by seed layer and its polycrystalline-silicon thin film transistors

Electronic Materials Letters

Volumn 4, Issue 2, 2008, Pages 51-55

  Shin, Bong Kwan ^a   Kim, Young Su ^a   Kwon, Jae Hwan ^a   Son, Se Wan ^a   Yoo, Seong Hoon ^a   Lee, Yong Woo ^a   Park, Jin Hyun ^a   Joo, Seung Ki ^a  

^a Seoul National University   (South Korea)

Author keywords

MILC; Ni silicide; Poly Si TFTs; Seed layer

Indexed keywords

EID: 57049189767     PISSN: 17388090     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

1. K. Nakazawa, J. Appl. Phys. 69, 1703 (1991).
2. H. Kuriyama, S. Kiyama, S. Noguchi, T. Kuwahara, S. Ishida, T. Nohda, K. Sano, J. Iwata, S. Tsuda, and S. Nakano, IEDM 1991 Tech. Dig., p. 565, IEEE, Washington, D.C. (1991).
3. P. Migliorato, S. W. B. Tam, O. K. B. Lui, T. M. Brown, M. J. Quinn, T. Shimoda, and H. Ohshima, SID Int. Symp. Digest Tech. Papers 28, 171 (1997).
4. T. J. Konno and R. Sinclair, Mat Sci Eng. A179/A180, 426 (1994).
5. G. Radnoczi, A. Robertsson, H. T. G. Hentzell, S. F. Gong, and M.-A. Hasan, J. Appl. Phys. 69, 6394 (1991).
6. A. Chiang, I. W. Wu, M. Hack, A. G. Lewis, T. Y. Huang, and C. C. Tasi, Extended Abs 1991 Conf Solid State Devices anal Materials, p. 586, The Japan Society of Applied Physics (1991).
7. S. W. Lee and S. K. Joo, IEEE Electron Device Lett. 17, 160 (1996).
8. S. W. Lee and Y. C. Jeon, and S. K. Joo, Appl. Phys. Lett. 66, 1671 (1995).
9. S. W. Lee, T-H. Ihn, and S. K. Joo, IEEE Electron Device Lett. 17, 407 (1996).
10. Y. G. Yoon. B. D. Kim, M. S. Kim, S. H. Choi, and S. K. Joo, Electrochem. Solid-State Lett., 7 G151 (2004).
11. N.-K. Song, Y.-S. Kim, M.-S. Kim, S.-H. Kan, and S.-K. Joo, Electrical and Solid-State Letters. 10, H142-H144, (2007).
12. P-C. Liu, C.-Y. Hou, and Y. C.-S. Wu, Thin Solid Films 478, 280 (2005).