The cationic clathrate Si46-2xP2xTex crystal growth by chemical vapour transport

Journal of Crystal Growth

Volumn 310, Issue 24, 2008, Pages 5402-5408

  Philipp, Frauke ^a   Schmidt, Peer ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

A1. Computer simulation; A1. Phase diagrams; A1. Phase equilibria; A2. Growth from vapour; A2. Single crystal growth; B1. Inorganic compound

Indexed keywords

CLARIFICATION; CRYSTAL GROWTH; CRYSTALLIZATION; CRYSTALLOGRAPHY; CRYSTALS; GRAIN BOUNDARIES; GROWTH (MATERIALS); INORGANIC COMPOUNDS; PHASE DIAGRAMS; SILICON; TELLURIUM; TELLURIUM COMPOUNDS; TEMPERATURE SENSORS; THERMAL GRADIENTS;

A1. COMPUTER SIMULATION; A1. PHASE DIAGRAMS; A1. PHASE EQUILIBRIA; A2. GROWTH FROM VAPOUR; A2. SINGLE-CRYSTAL GROWTH; B1. INORGANIC COMPOUND;

PHASE EQUILIBRIA;

EID: 57049155977     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.001     Document Type: Article

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