Extremely small proximity effect in 30 keV electron beam drawing with thin Calixarene Resist for 20 × 20 nm2 pitch dot arrays

Applied Physics Express

Volumn 1, Issue 2, 2008, Pages

  Hosaka, Sumio ^a   Mohamad, Zulfakri ^a   Shira, Masumi ^a   Sano, Hirotaka ^a   Yin, You ^a   Miyachi, Akihira ^a   Sone, Hayato ^a  

^a GUNMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRON GUNS; FORMING; PARTICLE BEAMS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR QUANTUM DOTS; SILICON;

CALIXARENE RESISTS; DOT ARRAYS; DOT DIAMETERS; DOT SIZES; DRAWING SYSTEMS; INTENSITY DISTRIBUTIONS; M SQUARES; PATTERNED MEDIAS; PROXIMITY EFFECT PARAMETERS; PROXIMITY EFFECTS; QUANTUM DEVICES; RESIST DOTS; SI SUBSTRATES;

DRAWING (FORMING);

EID: 57049129409     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.027003     Document Type: Article

References (9)

1. C. T. Rittner, M. E. Best, and B. D. Terris: IEEE Trans. Magn. 37 (2001) 1649.
2. S. Hosaka, M. Ichihashi, H. Hayakawa, S. Nishi, and M. Migitaka: Jpn. J. Appl. Phys. 21 (1982) 543.
3. M. Ishida, J. Fujita, T. Ogura, Y. Ochiai, E. Ohshima, and J. Momoda: Jpn. J. Appl. Phys. 42 (2003) 3913.
4. Y. Kojima, H. Kitahara, O. Kasono, M. Katsumura, and Y. Wada: Jpn. J. Appl. Phys. 37 (1998) 2137.
5. S. Hosaka, H. Sano, K. Itoh, and H. Sone; Microelectron. Eng. 83 (2006) 792.
6. S. Hosaka, H. Sano, M. Shirai, Y. Yin, and H. Sone: Microelectron. Eng. 84 (2007) 802.
7. S. Hosaka, H. Sano, M. Shirai, and H. Sone: Appl. Phys. Lett. 89 (2006) 223131.
8. J. Fujita, Y. Ohnishi, Y. Ochiai, and S. Matsui: Appl. Phys. Left. 68 (1996) 1297.
9. T. H. P. Chang: J. Vac. Sci. Technol. 12 (1975) 1271.