Formation of ZnTe by stacked elemental layer method

Applied Surface Science

Volumn 255, Issue 5 PART 1, 2008, Pages 2143-2148

  Bhahada, K C ^a   Tripathi, B ^a   Acharya, N K ^b   Kulriya, P K ^c   Vijay, Y K ^a  

^a UNIVERSITY OF RAJASTHAN   (India)

^b M S UNIVERSITY OF BARODA   (India)

^c INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

AFM; Optical bandgap; SHI; Thin film of ZnTe; XRD

Indexed keywords

ATOMIC FORCE MICROSCOPY; ENERGY GAP; HEAVY IONS; II-VI SEMICONDUCTORS; OPTICAL BAND GAPS; RAPID THERMAL ANNEALING; SUBSTRATES; SURFACE ROUGHNESS; TELLURIUM COMPOUNDS; THERMAL EVAPORATION; VACUUM EVAPORATION; X RAY DIFFRACTION; ZINC COMPOUNDS;

CLEANED GLASS SUBSTRATES; RAPID THERMAL ANNEALING (RTA); STACKED ELEMENTAL LAYER; SWIFT HEAVY ION IRRADIATIONS (SHI); THIN FILM OF ZNTE; VACUUM THERMAL ANNEALING; VACUUM THERMAL EVAPORATION; X-RAY FLUORESCENCE MEASUREMENT;

THIN FILMS;

EID: 56949108398     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.07.068     Document Type: Article

References (23)

1. Rusu G.I., Prepelita P., Rusu R.S., Apetroaie N., Oniciuc G., and Amariei A. J. Optoelectron. Adv. Mater. 8 (2006) 922
2. In: Bhargava R. (Ed). Properties of Wide Bandgap II-VI Semiconductors (1997), INSPEC, London
3. VI Compounds (1990), Polish Scientific Publishers, Warsa
4. 6 Compounds (1986), Nauka, Moscow (in Russian)
5. Chopra K.L. Thin Film Phenomena (1969), McGraw-Hill, New York
6. In: Massel L.I., and Glang R. (Eds). Handbook of Thin Film Technology (1980), McGraw-Hill, New York
7. Curz L.R., and de Avillez R.R. Thin Solid Films 373 (2000) 15
8. Carter M.J., I'Amson I., Knowles A., and Hill R. Proceedings of the 19th IEEE Conference of Photovoltaic Specialists. New Orlence, New York (1987) 1275
9. Ohshita M. J. Appl. Phys. 10 (1971) 1365
10. Chakraborty B.R., Halder S.K., Karar N., Kabiraj D., and Avasthi D.K. J. Phys. D: Appl. Phys. 38 (2005) 2836
11. Mangal R.K., Tripathi B., Singh M., and Vijay Y.K. Bull. Mater. Sci. 30 (2007) 5
12. Sreekumar R., Ratheesh Kumar P.M., Sudha Kartha C., Vijayakumar K.P., Kabiraj D., Khan S.A., Avasthi D.K., Kashiwaba Y., and Abe T. Semicond. Sci. Technol. 21 (2006) 382
13. Sreekumar R., Ratheesh Kumar P.M., Sudha Kartha C., Vijayakumar K.P., Kabiraj D., Khan S.A., and Avasthi D.K. Nucl. Inst. Methods Phys. Res. B 244 (2006) 190
14. Cullity B.D. Elements of X-Ray Diffraction (1978), Addison, Masachusetts p. 170
15. R.K. Sharma, Ph.D. Thesis, Department of Physics, University of Rajasthan, Jaipur, 2005, p. 83.
16. Riverose G., Gomez H., Henriquez R., Sshrebler R., Cordova R., Marotti R.E., and Dalchiele E.A. Boletin Sociedad Quim. 47 4 (2007) 1
17. Kumar V., Sachin Kr., Sharma T.P., Sharma V., and Singh. Opt. Mater. 12 (1999) 115
18. Amutha R., Subbarayan A., and Sathyamoorthy R. Cryst. Res. Technol. 41 (2006) 1174
19. In: Tauce J. (Ed). Amorphous and Liquid Semiconductors (1974), Plenum Press, New York p. 159
20. Mangal R.K., Singh M., Vijay Y.K., and Avasthi D.K. Bull. Mater. Sci. 29 (2006) 653
21. Daweritz L. J. Cryst. Growth 23 (1974) 307
22. Rusu G.I., Prepelita P., Apetroaei N., and Popa G. J. Optoelectron. Adv. Mater. 7 (2005) 829
23. Jurczyk J., Sitko R., and Zawisaza B. Franciszek Mikrochim. Acta 41 (1999) 132