Saturation effects observed in high fluence heavy ion implantation at few tens of keV

Vacuum

Volumn 83, Issue 5, 2009, Pages 836-840

  Sahu, G ^a   Rath, S K ^b   Joseph, B ^a   Roy, G S ^c   Mahapatra, D P ^a  

^a INSTITUTE OF PHYSICS   (India)

^b RAVENSHAW UNIVERSITY   (India)

^c Orissa Bigyan Academy   (India)

Author keywords

Ion implantation; Metal nanoclusters; Raman scattering

Indexed keywords

ACTIVATION ENERGY; ATOMIC PHYSICS; ELECTROLYSIS; GLASS; ION BOMBARDMENT; ION IMPLANTATION; IONS; METALS; OPTICAL GLASS; RAMAN SCATTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCATTERING; SEMICONDUCTOR DOPING; SILICA; SILICON; SMELTING;

AG ATOMS; BEAM ENERGIES; DIFFUSION ACTIVATION ENERGIES; FLUENCE; HOST MATRIXES; IMPLANTATION FLUENCE; METAL ATOMS; METAL CONTENTS; METAL NANOCLUSTERS; OPTICAL ABSORPTIONS; RUTHERFORD BACKSCATTERING SPECTROMETRIES; SATURATION EFFECTS; SI MATRIXES; SILICA GLASSES;

ATOMS;

EID: 56949105666     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2008.08.005     Document Type: Article

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