Simultaneous effects of pressure and temperature on donors in a GaAlAs/GaAs quantum well

Superlattices and Microstructures

Volumn 43, Issue 1, 2008, Pages 63-71

  John Peter, A ^a   Navaneethakrishnan, K ^b  

^a ABDUS SALAM INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS   (Italy)

^b MADURAI KAMARAJ UNIVERSITY   (India)

Author keywords

Donor binding energy; Impurity state

Indexed keywords

APPROXIMATION THEORY; BINDING ENERGY; EXCITED STATES; PERMITTIVITY; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE;

DONOR BINDING ENERGY; HYDROGENIC DONORS; IMPURITY STATES;

SEMICONDUCTOR LASERS;

EID: 36549035775     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2007.06.007     Document Type: Article

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