A programmable facilitating synapse device

Proceedings of the International Joint Conference on Neural Networks

Volumn , Issue , 2008, Pages 1615-1620

  Chen, Yajie ^a   McDaid, Liam ^b   Hall, Steve ^a   Kelly, Peter ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b UNIVERSITY OF ULSTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; CAPACITANCE; CAPACITORS; CHARGE COUPLED DEVICES; CHARGE DENSITY; CHARGE TRANSFER; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC EQUIPMENT; ION EXCHANGE; METALLIC COMPOUNDS; MOS DEVICES; NETWORKS (CIRCUITS); NEURAL NETWORKS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; TRANSISTOR TRANSISTOR LOGIC CIRCUITS; TRANSISTORS;

CURRENT MIRRORS; CURRENT SPIKES; DENSITY OF CHARGES; FREQUENCY RANGES; GATE VOLTAGES; METAL OXIDES; MOS TRANSISTORS; NEURON CIRCUITS; POSTSYNAPTIC POTENTIALS; POWER CONSUMPTIONS; PRESYNAPTIC; SIMULATION RESULTS; SUB THRESHOLDS; TRANSIENT MODES;

MOS CAPACITORS;

EID: 56349163410     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IJCNN.2008.4634013     Document Type: Conference Paper

References (10)

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