Analysis of radiation effects on individual DRAM cells

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2534-2538

  Scheick Leif, Z ^a   Guertin, S M ^a   Swift, G M ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; ERROR DETECTION; IONIZING RADIATION; TRANSISTORS;

SINGLE EVENT EFFECTS; TOTAL IONIZING DOSE;

RADIATION EFFECTS;

EID: 0034450424     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903804     Document Type: Conference Paper

References (13)

1. Radiation evaluation of 3.3 volt 16 Mb DRAMs for solid state memory space application
2. Radiation testing results of COTS based space microcircuits
3. Single event effect test results for candidate spacecraft electronics
4. Study of radiation effects on low voltage memories
5. Current single event test result for candidate spacecraft electronics
6. Radiation testing of flight lots for MARS-94 covering-semi-conductor types as 4M-BIT DRAM, 256 K-BIT SRAM, 256 K-BIT EEPROM and a 53C90 SCSI controller
7. Lateral charge transport from heavy ions in IC chips
8. A new class of hard errors
9. A proposed SEU tolerant DRAM cell
10. Total dose failure in advance electronics from single ions
11. Radiation effects on five volt and advanced lower voltage DRAMs
12. Measurements of dose with individual FAMOS transistors
13. Phenomenological application of target theory effects in SEE analysis