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Volumn 94, Issue 1, 2009, Pages 89-94
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Study of high energy Mn+1 ion implantation in GaAs
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
ANNEALING;
ASTROPHYSICS;
ELECTRIC RESISTANCE;
ELECTROLYSIS;
FERROMAGNETIC MATERIALS;
FERROMAGNETISM;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
FOURIER TRANSFORMS;
ION BOMBARDMENT;
ION IMPLANTATION;
IONS;
MAGNETIC FIELD EFFECTS;
MAGNETORESISTANCE;
MANGANESE;
MANGANESE ALLOYS;
MANGANESE COMPOUNDS;
MICROSCOPIC EXAMINATION;
PARAMAGNETIC MATERIALS;
SEMICONDUCTING GALLIUM;
SUBSTRATES;
X RAY DIFFRACTION ANALYSIS;
ALLOY FORMATIONS;
BANDGAP;
BINARY COMPOUNDS;
CHARGE CONDUCTIONS;
FOURIER TRANSFORM INFRARED STUDIES;
GAAS SUBSTRATES;
HIGH DOSES;
HIGH ENERGIES;
HIGH RESOLUTIONS;
IMPURITY BANDS;
LOW ENERGIES;
MAGNETIZATION MEASUREMENTS;
MN DOPING;
MN IONS;
PARAMAGNETIC BEHAVIORS;
PEAK POSITIONS;
PHASE PEAKS;
RED SHIFTS;
RESISTIVITY MEASUREMENTS;
SEMI-CONDUCTORS;
SUBSEQUENT ANNEALING;
GALLIUM ALLOYS;
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EID: 56349101748
PISSN: 09478396
EISSN: 14320630
Source Type: Journal
DOI: 10.1007/s00339-008-4945-9 Document Type: Article |
Times cited : (8)
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References (37)
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