Enhancing the light extraction of (AlxGa1-x) 0.5In0.5 P-based light-emitting diode fabricated via geometric sapphire shaping

IEEE Photonics Technology Letters

Volumn 20, Issue 5, 2008, Pages 369-371

  Lee, Yea Chen ^a   Lee, Chia En ^a   Kuo, Hao Chung ^a   Lu, Tien Chang ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

AlGaInP based light emitting diodes (LEDs); Geometric sapphire shaping light emitting diodes (GSS LEDs); Glue bonding (GB); Sapphire chemical wet etching

Indexed keywords

ALGAINP-BASED LIGHT-EMITTING DIODES; ALGAINP-BASED LIGHT-EMITTING DIODES (LEDS); CHEMICAL WET ETCHING; GEOMETRIC SAPPHIRE SHAPING LIGHT-EMITTING DIODES (GSS-LEDS); GLUE BONDING;

DIODES; GALLIUM; GEOMETRY; GLUES; GLUING; LIGHT EMISSION; SAPPHIRE; WET ETCHING;

LIGHT EMITTING DIODES;

EID: 56349088461     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.916905     Document Type: Article

References (10)

1. C. P. Kuo, R. Fletcher, T. Osentowski, M. Lardizabal, M. Craford, and V. Robbins, "High performance AlGaInP visible light-emitting diodes," Appl. Phys. Lett., vol.57, no.27, pp. 2937-2939, Dec. 31, 1990.
2. H. Sugawara, M. Ishikawa, and G. Hatakoshi, "High-efficiency In- GaAIP/GaAs visible light-emitting diodes," Appl. Phys. Lett., vol.58, pp. 157-160, 1991.
3. K. Kobayashi, "Room-temperature CW operation of AlGaInP double hetero-structure visible lasers," Electron. Lett., vol.21, pp. 931-932, 1985.
4. P. Altieri, D. Eisert, A. Jaeger, R. Windisch, N. Linder, P. Stauss, R. Oberschmid, and K. Streubel, "Analysis of internal quantum efficiency of high-brightness AlGaInP LEDs," in Proc. 4th Int. Conf. Numerical Simulation Optoelectronic Devices, Santa Barbara, CA, 2004, pp. 13-14.
5. F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, M. G. Craford, and V. M. Robbins, "Very high-efficiency semiconductor wafer bonded transparent substrate (Al Ga ) In P/GaP light-emitting diodes," Appl. Phys. Lett., vol.64, pp. 2839-2841, 1994.
6. M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, "High-power truncated inverted pyramid (Al Ga ) In P/GaP light-emitting diodes exhibiting >50% external quantum efficiency," Appl. Phys. Lett., vol.75, pp. 2365-2367, 1999.
7. R. Windisch, B. Dutta, M. Kuijk, A. Knobloch, S. Meinlschmidt, S. Schoberth, P. Kiesel, G. Borghs, G. H. Döhler, and P. Heremans, "40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography," IEEE Trans. Electron Devices, vol.47, no.7, pp. 1492-1498, Jul. 2000.
8. D. J. Lawrence, D. C. Abbas, D. J. Phelps, and F. T. J. Smith, "GaAs P LED's with efficient transparent contacts for spatially uniform light emission," IEEE Trans. Electron Devices, vol.ED-30, no.6, pp. 580-585, Jun. 1983.
9. T. Gessmann, E. F. Schubert, J. W. Graff, K. Streubel, and C. Karnutsch, "Omnidirectional reflective contacts for light-emitting diodes," IEEE Electron Device Lett., vol.24, no.11, pp. 683-685, Nov. 2003.
10. T. Gessmann, H. Luo, J. Q. Xi, K. P. Streubel, and E. F. Schubert, "Light-emitting diodes with integrated omnidirectionally reflective contacts," in Proc. SPIE Int. Soc. Opt. Eng., 2004, vol.5366, pp. 53-61.