Analysis of internal quantum efficiency of high-brightness AlGaInP LEDs

Proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD '04

Volumn , Issue , 2004, Pages 13-14

  Altieri, P ^a   Eisert, D ^a   Jaeger, A ^a   Windisch, R ^a   Linder, N ^a   Stauss, P ^a   Oberschmid, R ^a   Streubel, K ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON TRANSITIONS; LIGHT ABSORPTION; LIGHT EMISSION; LIGHT EMITTING DIODES; PHOTONS; RAY TRACING; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS;

CARRIER INJECTION; DIFFUSIVE LEAKAGE; SURFACE TEXTURING; WAFER BONDING;

QUANTUM EFFICIENCY;

EID: 14244256253     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. F. A. Kisch et al, Appl. Phys. Lett. 64 (1994) 2839.
2. K. Streubel et al, IEEE J. Quant. Electr. 8 (2002) 321.
3. R. Windisch et al, Photonics West, SPIE Proceedings 5366-06, San Jose, Jan. 2004.