p-Type gas-sensing behaviour of undoped SnO2 thin films irradiated with a high-energy ion beam

Sensors and Actuators, B: Chemical

Volumn 135, Issue 1, 2008, Pages 35-39

  Rani, Sanju ^a   Bhatnagar, M C ^a   Roy, Somnath C ^b   Puri, N K ^c   Kanjilal, D ^d  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c ITS Engineering College   (India)

^d INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

Gas sensing; Ion irradiation; p Type; Tin oxide

Indexed keywords

ACTIVATION ENERGY; BEAM PLASMA INTERACTIONS; ELECTROLYSIS; GAS DETECTORS; GAS SENSING ELECTRODES; GASES; HEAT CONDUCTION; HIGH ENERGY PHYSICS; ION BEAMS; ION BOMBARDMENT; IONS; LIGHT EMISSION; LUMINESCENCE; OXYGEN; PHOTOELECTRON SPECTROSCOPY; PHOTOLUMINESCENCE; THICK FILMS; THIN FILMS; TIN; TITANIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

ENERGY ION BEAMS; GAS RESPONSES; HOLE DENSITIES; INTERSTITIAL OXYGENS; ION FLUENCE; ION IRRADIATION; IRRADIATED FILMS; P-TYPE; P-TYPE CONDUCTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

DENSITY OF GASES;

EID: 56249136229     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2008.07.014     Document Type: Article

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