Strong photoluminescence at 1540 nm from Er-doped amorphous silicon oxycarbide: A novel silicon material for photonic applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7030, Issue , 2008, Pages

  Gallis, Spyros ^a,b   Nikas, Vasileios ^a   Suhag, Himani ^a   Huang, Mengbing ^a   Kaloyeros, Alain E ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Erbium; Excitation cross section; Lifetime; Photoluminescence; Photonics; Silicon oxycarbide

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); ELECTROLYSIS; ERBIUM; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; INFRARED SPECTROSCOPY; IONS; LIGHT EMISSION; LIGHT SOURCES; LUMINESCENCE; NONMETALS; PHOTOEXCITATION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON CARBIDE; SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; SUGAR (SUCROSE); THICK FILMS; THIN FILMS;

AMORPHOUS SIC; AMORPHOUS SILICON OXYCARBIDE; ANNEALED SAMPLES; AS GROWN; CONTROL SAMPLES; DOPED SILICONS; ER LUMINESCENCES; ERBIUM-DOPED; EXCITATION CROSS SECTION; EXCITATION CROSS SECTIONS; FOURIER TRANSFORM INFRARED; ION EXCITATIONS; LIFETIME; NOVEL METHODS; OPTICAL EXCITATIONS; ORDERS OF MAGNITUDES; PHOTOLUMINESCENCE PROPERTIES; PHOTONIC APPLICATIONS; PL INTENSITIES; POSTDEPOSITION ANNEALING; POWER DEPENDENCES; PUMPING WAVELENGTHS; SILICON MATERIALS; SILICON OXYCARBIDE; STRONG CORRELATIONS; TEMPERATURE RANGES;

AMORPHOUS SILICON;

EID: 56249103469     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.795560     Document Type: Conference Paper

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