Effects of donor concentration on the electrical properties of Nb-doped BaTiO 3 thin films

Journal of Applied Physics

Volumn 97, Issue 5, 2005, Pages

  Liu, Lifeng ^a   Guo, Haizhong ^a   Lü, Huibin ^a   Dai, Shouyu ^a   Cheng, Bolin ^a   Chen, Zhenghao ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; DONOR CONCENTRATION; POLARON MODELS; ROOM TEMPERATURE;

BARIUM COMPOUNDS; CHARGE CARRIERS; CONCENTRATION (PROCESS); DOPING (ADDITIVES); EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; NIOBIUM; SYNCHROTRON RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

EID: 20444461141     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1858056     Document Type: Article

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