Evidence for metal-semiconductor transitions in twisted and collapsed double-walled carbon nanotubes by scanning tunneling microscopy

Nano Letters

Volumn 8, Issue 10, 2008, Pages 3350-3356

  Giusca, Cristina E ^a   Tison, Yann ^b   Silva, S Ravi P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SPECTROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; MULTIWALLED CARBON NANOTUBES (MWCN); SCANNING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS;

COLLAPSE MODES; COLLAPSED STRUCTURES; DEVICE APPLICATIONS; DOUBLE-WALLED CARBON NANOTUBES; ELECTRONIC APPLICATIONS; ELECTRONIC BAND GAPS; FIRST-PRINCIPLE CALCULATIONS; HELICITY; INTERSHELL INTERACTIONS; METAL-SEMICONDUCTOR JUNCTIONS; METAL-SEMICONDUCTOR TRANSITIONS; METALLIC NANOTUBES; SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPIES; SEMICONDUCTOR COMPONENTS;

CARBON NANOTUBES;

CARBON NANOTUBE; METAL; METAL NANOPARTICLE; NANOTUBE;

ARTICLE; CHEMISTRY; ELECTRONICS; METHODOLOGY; NANOTECHNOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR;

ELECTRONICS; METAL NANOPARTICLES; METALS; MICROSCOPY, SCANNING TUNNELING; NANOTECHNOLOGY; NANOTUBES; NANOTUBES, CARBON; SEMICONDUCTORS;

EID: 56149114516     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl801782k     Document Type: Article

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