Electrophilic reaction mechanism for alkyl monolayer formation initiated at isolated dangling bonds of the H-GaN (0001) surface: A periodic density functional theory study

Journal of Physical Chemistry C

Volumn 112, Issue 43, 2008, Pages 16932-16937

  Hu, Chun Li ^a,b   Li, Jun Qian ^a,b   Chen, Yong ^a,b   Wang, Wen Feng ^a,b  

^a FUZHOU UNIVERSITY   (China)

^b FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ADSORPTION; AMINES; CHEMICAL REACTIONS; CORRELATION THEORY; DANGLING BONDS; DENSITY FUNCTIONAL THEORY; FORMING; GALLIUM ALLOYS; GALLIUM NITRIDE; GAS ADSORPTION; HYDROCARBONS; HYDROGEN; OLEFINS; PLASMAS; PORT TERMINALS; SEMICONDUCTING GALLIUM; SILICON; SYNTHESIS (CHEMICAL);

ALKYL MONOLAYERS; BARRIER HEIGHTS; CARBON SUBSTITUENTS; ELECTROPHILIC ADDITION REACTIONS; ELECTROPHILIC REACTIONS; HYDROGEN ATOMS; INITIAL ADSORPTIONS; METASTABLE INTERMEDIATES; PERIODIC DENSITY FUNCTIONAL THEORIES; PERIODIC DENSITY FUNCTIONAL THEORY CALCULATIONS; RADICAL ADDITIONS; REACTION PATHWAYS; SI SURFACES; TERMINAL ALKENES;

SURFACE REACTIONS;

EID: 56049112784     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp800325f     Document Type: Article

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