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Volumn 382, Issue 2-3, 2008, Pages 170-175
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Microstructures of beta-silicon carbide after irradiation creep deformation at elevated temperatures
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Author keywords
[No Author keywords available]
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Indexed keywords
ANISOTROPY;
CREEP;
DEFORMATION;
ELECTRON IRRADIATION;
IRRADIATION;
MICROSCOPIC EXAMINATION;
MICROSTRUCTURAL EVOLUTION;
MICROSTRUCTURE;
RESIDUAL STRESSES;
SILICON;
SILICON CARBIDE;
STRAIN;
STRESS RELAXATION;
THEOREM PROVING;
CREEP DEFORMATIONS;
CREEP STRAINS;
DISLOCATION LOOPS;
ELEVATED TEMPERATURES;
HIGH FLUX ISOTOPE REACTORS;
INITIAL STRESSES;
IRRADIATION CONDITIONS;
IRRADIATION CREEPS;
MATRIX DEFECTS;
MICROSTRUCTURAL FEATURES;
MONOCRYSTALLINE;
PERMANENT STRAINS;
POLYCRYSTAL LINES;
THIN STRIPS;
NEUTRON IRRADIATION;
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EID: 55949124149
PISSN: 00223115
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnucmat.2008.08.012 Document Type: Article |
Times cited : (24)
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References (22)
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