Irradiation creep of high purity CVD silicon carbide as estimated by the bend stress relaxation method

Journal of Nuclear Materials

Volumn 367-370 A, Issue SPEC. ISS., 2007, Pages 758-763

  Katoh, Y ^a   Snead, L L ^a   Hinoki, T ^b   Kondo, S ^b   Kohyama, A ^b  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BETA-PHASE SILICON CARBIDE; CREEP STRAIN; IRRADIATION CREEP;

CHEMICAL VAPOR DEPOSITION; DEFORMATION; NEUTRON IRRADIATION; POLYCRYSTALLINE MATERIALS; STRESS RELAXATION;

SILICON CARBIDE;

EID: 34447550546     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnucmat.2007.03.086     Document Type: Article

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