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Volumn 93, Issue 1, 2009, Pages 33-36

Carbon-doped Sb2S3 thin films: Structural, optical and electrical properties

Author keywords

Chemical bath deposition; Doping; Sb2S3 thin films

Indexed keywords

ANTIMONY; CARBON; CARBON FILMS; CHEMICAL MODIFICATION; CHEMICAL PROPERTIES; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; SOLIDS; THICK FILMS; THIN FILMS; VACUUM; VACUUM EVAPORATION; VAPOR DEPOSITION;

EID: 55949095883     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.02.026     Document Type: Article
Times cited : (67)

References (28)
  • 4
    • 34247359441 scopus 로고    scopus 로고
    • Antimony sulfide thin films in chemically deposited thin film photovoltaic cells
    • Messina S., Nair M.T.S., and Nair P.K. Antimony sulfide thin films in chemically deposited thin film photovoltaic cells. Thin Solid Films 515 (2007) 5777
    • (2007) Thin Solid Films , vol.515 , pp. 5777
    • Messina, S.1    Nair, M.T.S.2    Nair, P.K.3
  • 7
    • 0032050338 scopus 로고    scopus 로고
    • Chemically and electrochemically deposited thin films for solar energy materials
    • Savadogo O. Chemically and electrochemically deposited thin films for solar energy materials. Sol. Energy Mater. Sol. Cells 52 (1998) 361
    • (1998) Sol. Energy Mater. Sol. Cells , vol.52 , pp. 361
    • Savadogo, O.1
  • 10
    • 0026840141 scopus 로고
    • Studies on new chemically deposited photoconducting antimony trisulphide thin films
    • Savadogo O., and Mandal K.C. Studies on new chemically deposited photoconducting antimony trisulphide thin films. Sol. Energy Mater. Sol. Cells 26 (1992) 117
    • (1992) Sol. Energy Mater. Sol. Cells , vol.26 , pp. 117
    • Savadogo, O.1    Mandal, K.C.2
  • 11
    • 0028446738 scopus 로고
    • A simple and low-cost technique for electroless deposition of chalcogenide thin films
    • Grozdanov I. A simple and low-cost technique for electroless deposition of chalcogenide thin films. Semicond. Sci. Technol. 9 (1994) 1234
    • (1994) Semicond. Sci. Technol. , vol.9 , pp. 1234
    • Grozdanov, I.1
  • 13
    • 0013315082 scopus 로고
    • P-type doping limit of carbon in organometallic vapor phase epitaxial growth of GaAs using carbon tetrachloride
    • Enquist P.M. P-type doping limit of carbon in organometallic vapor phase epitaxial growth of GaAs using carbon tetrachloride. Appl. Phys. Lett. 57 (1990) 2348
    • (1990) Appl. Phys. Lett. , vol.57 , pp. 2348
    • Enquist, P.M.1
  • 14
    • 36448998671 scopus 로고
    • Carbon doping of GaAs and (In,Ga)As in solid source molecular beam epitaxy using carbon tetrabromide
    • Zhang Kai., Hwang W.-y., Miller D.L., and Kapitan L.W. Carbon doping of GaAs and (In,Ga)As in solid source molecular beam epitaxy using carbon tetrabromide. Appl. Phys. Lett. 63 (1993) 2399
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 2399
    • Zhang, Kai.1    Hwang, W.-y.2    Miller, D.L.3    Kapitan, L.W.4
  • 17
    • 0036571941 scopus 로고    scopus 로고
    • Carbon reactivation kinetics in GaAs: its dependence on dopant precursor, doping level and layer thickness
    • Mimila-Arroyo J., Bland S., and Barbe M. Carbon reactivation kinetics in GaAs: its dependence on dopant precursor, doping level and layer thickness. J. Appl. Phys. 91 (2002) 5923
    • (2002) J. Appl. Phys. , vol.91 , pp. 5923
    • Mimila-Arroyo, J.1    Bland, S.2    Barbe, M.3
  • 18
    • 0035516634 scopus 로고    scopus 로고
    • P-type carbon doping of GaSb
    • (special issue paper)
    • Wiersma R., Stotz J.A.H., et al. P-type carbon doping of GaSb. J. Electron. Mater. 30 (2001) 1429 (special issue paper)
    • (2001) J. Electron. Mater. , vol.30 , pp. 1429
    • Wiersma, R.1    Stotz, J.A.H.2
  • 20
    • 0242691811 scopus 로고    scopus 로고
    • Near band-edge optical properties of cubic GaN with and without carbon doping
    • Fernandez J.R.L., Cerdeira F., et al. Near band-edge optical properties of cubic GaN with and without carbon doping. Microelectron. J. 35 (2004) 73
    • (2004) Microelectron. J. , vol.35 , pp. 73
    • Fernandez, J.R.L.1    Cerdeira, F.2
  • 21
    • 3142567283 scopus 로고
    • 4 in radio-frequency plasma-assisted molecular beam epitaxy
    • 4 in radio-frequency plasma-assisted molecular beam epitaxy. J. Appl. Phys. 95 (1995) 8456
    • (1995) J. Appl. Phys. , vol.95 , pp. 8456
    • Green, D.S.1    Mishra, U.K.2
  • 28
    • 0000132945 scopus 로고
    • Observation of interstitial carbon in heavily carbon-doped GaAs
    • Hofler G.E., and Hsieh K.C. Observation of interstitial carbon in heavily carbon-doped GaAs. Appl. Phys. Lett. 61 (1992) 327
    • (1992) Appl. Phys. Lett. , vol.61 , pp. 327
    • Hofler, G.E.1    Hsieh, K.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.