Carbon reactivation kinetics in GaAs: Its dependence on dopant precursor, doping level, and layer thickness

Journal of Applied Physics

Volumn 91, Issue 9, 2002, Pages 5923-5928

  Mimila Arroyo, J ^a   Bland, S ^b   Barbe M ^c  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b IQE INC   (United States)

^c Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING EXPERIMENTS; ANNEALING TEMPERATURES; AS DOPING; AS-GROWN; CARBON CONCENTRATIONS; CARBON DOPING; CARBON REACTIVATION; CARBON SOURCE; CONCENTRATION MEASUREMENT; DOPANT PRECURSORS; DOPING LEVELS; EMPIRICAL FORMULAS; EX SITU; FIRST ORDER; GAAS; HYDROGEN COMPLEXES; LAYER THICKNESS; OUT-DIFFUSION; SECONDARY ION MASS SPECTROSCOPY;

ACTIVATION ENERGY; GALLIUM ARSENIDE; HOLE CONCENTRATION; HYDROGEN; KINETICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM;

CARBON;

EID: 0036571941     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1467953     Document Type: Article

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