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Volumn 53, Issue 4, 2008, Pages 2011-2014

Selective growth of vertical and horizontal ZnO nanowires for device applications

Author keywords

Nanowire; Vertical and horizontal devices; ZnO

Indexed keywords


EID: 55949089067     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.53.2011     Document Type: Article
Times cited : (4)

References (14)
  • 14
    • 55949085068 scopus 로고    scopus 로고
    • We should note that the ZnO seed layer (thickness: 50 nm) also contributed to the PL spectra. Since the of the NWs (length: several microns) was larger than that of the seed layer, the ZnO NWs should dominate the optical properties.
    • We should note that the ZnO seed layer (thickness: 50 nm) also contributed to the PL spectra. Since the volume of the NWs (length: several microns) was larger than that of the seed layer, the ZnO NWs should dominate the optical properties.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.