Characteristics of ZnO nanowall structures grown on gan template using organometallic chemical vapor deposition

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 8, 2008, Pages 3851-3856

  Wu, C C ^a   Wuu, D S ^a   Chen, T N ^a   Yu, T E ^a   Lin, P R ^a   Horng, R H ^a   Sun, S ^b  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b STRUCTURED MATERIALS INDUSTRIES INC   (United States)

Author keywords

GaN; Nanowall network; Organometallic chemical vapor deposition; Sapphire; ZnO

Indexed keywords

BAND EMISSIONS; CRYSTAL QUALITIES; FORMATION PROCESSES; GAN; GAN EPILAYERS; GAN TEMPLATES; GAN/SAPPHIRE; GROWTH CONDITIONS; GROWTH PARAMETERS; HIGH INTENSITIES; METAL CATALYSTS; NANOWALL; NANOWALL NETWORK; NETWORK STRUCTURES; ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION; ORGANOMETALLIC CHEMICAL VAPOR DEPOSITIONS; PL MEASUREMENTS; PL SPECTRUMS; ROOM TEMPERATURES; SAPPHIRE SUBSTRATES; STRUCTURES GROWN; ULTRAVIOLET PEAKS; UNIFORMLY DISTRIBUTED; ZNO; ZNO NANOSTRUCTURES;

CATALYSIS; CATALYSTS; CHEMICAL VAPOR DEPOSITION; CORUNDUM; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; GALLIUM NITRIDE; LATTICE MISMATCH; LIGHT EMISSION; LUMINESCENCE; MATERIALS PROPERTIES; NANOSTRUCTURES; OPTICAL PROPERTIES; ORGANOMETALLICS; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; THEOREM PROVING; VAPORS; ZINC ALLOYS; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 55849142308     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.181     Document Type: Article

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