A novel three dimensional field effect transistor based on single-walled carbon nanotubes

2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Volumn , Issue , 2008, Pages 18-21

  Selvarasah, Selvapraba ^a   Makaram, Prashanth ^b   Chen, Chia Ling ^a   Pan, Huiyan ^a   Busnaina, Ahmed ^b   Dokmeci, Mehmet R ^a  

^a Northeastern University   (United States)

^b NORTHEASTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARBON NANOTUBES; DIELECTRIC DEVICES; ELECTRON MULTIPLIERS; GATE DIELECTRICS; GATES (TRANSISTOR); NANOCOMPOSITES; NANOELECTRONICS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; SINGLE-WALLED CARBON NANOTUBES (SWCN); THREE DIMENSIONAL; TRANSISTORS;

AMBIPOLAR BEHAVIORS; CONDUCTING CHANNELS; HIGH DENSITIES; LOW TEMPERATURES; MAXIMUM TRANSCONDUCTANCES; MULTI LAYERS; NANOELECTRONIC CIRCUITS; NANOTUBE TRANSISTORS; OFF CURRENTS; PARYLENE; TOP GATES;

FIELD EFFECT TRANSISTORS;

EID: 55349140780     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2008.14     Document Type: Conference Paper

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