Design approach to improve linearity and power performance of microwave FETs

International Journal of RF and Microwave Computer-Aided Engineering

Volumn 18, Issue 6, 2008, Pages 527-535

  Colantonio, P ^a   Giannini, F ^a   Limiti, E ^a   Nanni, A ^a   Camarchia, V ^b   Teppati, V ^b   Pirola, M ^b  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b POLITECNICO DI TORINO   (Italy)

Author keywords

High linearity; Intermodulation asymmetry; Power amplifiers; Volterra series

Indexed keywords

GALLIUM NITRIDE; HARMONIC ANALYSIS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTERMODULATION; INTERMODULATION DISTORTION; LINEARIZATION; OPTIMIZATION; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM; SUPERCONDUCTING DEVICES;

1-DB COMPRESSION POINTS; ANALYSIS RESULTS; BAND TERMINATIONS; DESIGN APPROACHES; GAN HEMT; HARMONIC LOADS; HIGH LINEARITY; INTERMODULATION PRODUCTS; MICROWAVE FETS; OUTPUT POWERS; POWER ADDED EFFICIENCIES; POWER LEVELS; POWER PERFORMANCES; TONE EXCITATIONS; VOLTERRA SERIES;

ELECTRIC LOAD FORECASTING;

EID: 55349103775     PISSN: 10964290     EISSN: 1099047X     Source Type: Journal    
DOI: 10.1002/mmce.20328     Document Type: Article

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