High efficiency and high linearity power amplifier design

International Journal of RF and Microwave Computer-Aided Engineering

Volumn 15, Issue 5, 2005, Pages 453-468

  Colantonio, Paolo ^a   García, José Angel ^b   Giannini, Franco ^a,d   Gómez, Carmen ^b,e   Carvalho, Nuno Borges ^c,f,g,h   Limiti, Ernesto ^a,d   Pedro, José Carlos ^c,f  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b UNIVERSITY OF CANTABRIA   (Spain)

^c UNIVERSITY OF AVEIRO   (Portugal)

^d University of Roma Tor Vergata ^*  (Italy)

^e SODERCAN

^f Telecommunications Institute

^g Portuguese Engineering Association   (Portugal)

^h IEEE

Author keywords

Class f; High efficiency; High linearity; Intermodulation; Microwave power amplifiers

Indexed keywords

CLASS-F; HIGH EFFICIENCY; HIGH LINEARITY; MICROWAVE POWER AMPLIFIERS;

ELECTRIC LOADS; FREQUENCIES; INTERMODULATION; MICROWAVES; PRODUCT DESIGN; SIGNAL DISTORTION;

POWER AMPLIFIERS;

EID: 27644556994     PISSN: 10964290     EISSN: None     Source Type: Journal    
DOI: 10.1002/mmce.20111     Document Type: Article

References (29)

1. C. Younkyu, C.Y. Hang, C. Shujun, Q. Yongxi, C.P. Wen, K.L. Wang, and T. Itoh, AlGaN/GaN HFET power amplifier integrated with microstrip antenna for RF front-end applications, IEEE Trans Microwave Theory Tech 51 (2003), 653-659.
2. D.M. Snider, A theoretical analysis and experimental confirmation of the optimally loaded and overdriven RF power amplifiers, IEEE Trans Electron Devices ED-14 (1967), 851-857.
3. F. Giannini, G. Leuzzi, E. Limiti, and L. Scucchia, Harmonic manipulation cure for high-efficiency power amplifier, Proc Euro Gallium Arsenide Applic Symp, 1994, pp. 349-351.
4. F. Giannini, G. Leuzzi, E. Limiti, and L. Scucchia, Harmonic-loaded microwave power amplifiers: Nonlinear design procedure, Int J Microwave and MillimeterWave CAE 5 (1995), 20-25.
5. H.L. Krauss, C.W. Bostian, and F.H. Raab, Solid-state radio engineering, J Wiley, New York, 1980.
6. S.C. Cripps, RF power amplifiers for wireless communications, Artech House, Boston, 1999.
7. C. Duvanaud, S. Dietsche, G. Pataut, and J. Obregon, High-efficient Class-F GaAs FET amplifiers operating with very low bias voltages for use in mobile telephones at 1.75 GHz, IEEE Microwave Guided Wave Lett 3 (1993), 268-270.
8. A. Mallet, T. Peyretaillade, R. Sommet, D. Floriot, S. Delage, J.M. Nebus, and J. Obregon, A design method for high-efficiency Class F HBT amplifiers, 1996 IEEE MTT-S Int Microwave Symp Dig 2 (1996), 855-858.
9. P. Colantonio, F. Giannini, G. Leuzzi, and E. Limiti, On the Class-F power amplifier design, Int J RF and Microwave CAE 9 (1999), 129-149.
10. F.H. Raab, Class-F power amplifiers with maximally flat waveforms, IEEE Trans Microwave Theory Tech 45 (1997), 2007-2012.
11. F.H. Raab, Maximum efficiency and output of Class-F power amplifiers, IEEE Trans Microwave Theory Tech 49 (2001), 1162-1166.
12. P. Colantonio, F. Giannini, G. Leuzzi, and E. Limiti, High-efficiency low-voltage power amplifier design by second harmonic manipulation, Int J RF and Microwave CAE 10 (2000), 19-32.
13. P. Colantonio, F. Giannini, G. Leuzzi, and E. Limiti, Multi harmonic manipulation for highly efficient microwave power amplifiers, Int J RF and Microwave CAE 11 (2001), 366-384.
14. H. Kondoh, FET power performance prediction using a linearized device model, IEEE MTT-S Int Microwave Symp Dig 2 (1989), 569-572.
15. L.J. Kushner, Estimating power amplifier large-signal gain, Microwave J (1990), 33:87-102.
16. P. Colantonio, F. Giannini, G. Leuzzi, and E. Limiti, A fast tool for high-efficiency microwave power amplifier design, Microwave Engg Europe, 1997, pp. 33-41.
17. L.J. Kushner, Output performances of idealised microwave power amplifiers, Microwave J (1989), 32:103-110.
18. S. Nishiki and T. Nojima, Harmonic reaction amplifier: A novel high-efficiency and high-power microwave amplifier, 1987 IEEE MTT-S Int Microwave Symp Dig 87 (1987), 963-966.
19. S. Toyoda, High-efficiency amplifiers, IEEE MTT-S Int Microwave Symp Dig 1 (1994), 253-256.
20. F. Giannini, G. Leuzzi, G. Orengo, and P. Colantonio, Modeling power and intermodulation behavior of microwave transistors with unified small-signal/large-signal neural network models, Int J RF and Microwave CAE 13 (2003), 276-284.
21. N. Carvalho and J. Pedro, Large- and small-signal IMD behavior of microwave power amplifiers, IEEE Trans Microwave Theory Tech MTT-47 (1999), 2364-2374.
22. J. Pedro and N. Carvalho, Intermodulation distortion in microwave and wireless circuits, Artech House, Boston, 2003.23.
23. C. Fager, J.C. Pedro, N.B. Carvalho, H. Zirath, F. Fortes, and M.J. Rosário, A comprehensive analysis of IMD behavior in RF CMOS power amplifiers, IEEE J Solid State Circ JSSC-39 (2004), 24-34.
24. th Euro Microwave Conf, Amsterdam, 2004, pp. 561-564.
25. E. Malaver, J.A. García, A. Tazón, and A. Mediavilla, Characterizing the linearity sweet-spot evolution in FET devices, Euro Gallium Arsenide and Other Compound Semicond Applic Symp, Munich, 2003.
26. D.R. Webster, G. Ataei, and D.G. Haigh, Low-distortion MMIC power amplifier using a new form of derivative superposition, IEEE Trans Microwave Theory Tech MTT-49 (2001), 328-332.
27. J.A. García, E. Malaver, L. Cabria, C. Gómez, A. Mediavilla, and A. Tazón, Device-level intermodulation distortion control on III-V FET's, Euro Gallium Arsenide and Other Compound Semicond Applic Symp, Munich, 2003.
28. M. Burgos-Garcia and F. Perez-Martinez, Simple procedure for optimum linearisation of amplifiers in multicarrier applications, IEE Electron Lett 30 (1994), 114-115.
29. N. Carvalho and J. Pedro, A comprehensive explanation of distortion sideband asymmetries, IEEE Trans Microwave Theory Tech MTT-50 (2002), 2090-2101.