Polymer-assisted generation of antimony-doped SnO2 nanoparticles with high crystallinity for application in gas sensors

Small

Volumn 4, Issue 10, 2008, Pages 1656-1660

  Wang, Yude D ^a,b   Djerdj, Igor ^c   Antonietti, Markus ^b   Smarsly, Bernd ^b  

^a YUNNAN UNIVERSITY   (China)

^b MAX PLANCK INSTITUTE OF COLLOIDS AND INTERFACES   (Germany)

^c ETH ZURICH   (Switzerland)

Author keywords

Electrical conductivity; Gas sensors; Nanoparticles; Sol gel processes

Indexed keywords

ABS RESINS; AMORPHOUS MATERIALS; ANTIMONY; CHEMICAL SENSORS; COLLOIDS; ELECTRIC CONDUCTIVITY; GAS DETECTORS; GELATION; NANOCRYSTALLINE ALLOYS; NANOPARTICLES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; OXYGEN; POLYMERS; SENSORS; SOL-GEL PROCESS; TIN; TITANIUM COMPOUNDS; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

ANTIMONY ATOMS; ELECTRICAL CONDUCTIVITIES; ELECTRICAL CONDUCTIVITY; GAS ATMOSPHERES; GAS SENSORS; HIGH CRYSTALLINITY; LATTICE FRINGES; NANO POWDERS; OPERATING TEMPERATURES; OXIDE CRYSTALLIZATIONS; POLYCRYSTAL LINES; SENSING MATERIALS; SOL-GEL PROCESSES; X-RAY DIFFRACTIONS;

GASES;

ANTIMONY; NANOPARTICLE; POLYMER; TIN DERIVATIVE; TIN DIOXIDE; UNCLASSIFIED DRUG;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; GAS; IMPEDANCE; INSTRUMENTATION; NANOTECHNOLOGY; SPECTROSCOPY; TEMPERATURE; ULTRASTRUCTURE; X RAY DIFFRACTION;

ANTIMONY; CRYSTALLIZATION; ELECTRIC IMPEDANCE; GASES; NANOPARTICLES; NANOTECHNOLOGY; POLYMERS; SPECTRUM ANALYSIS; TEMPERATURE; TIN COMPOUNDS; X-RAY DIFFRACTION;

EID: 55349093965     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200800644     Document Type: Article

References (47)

1. a) N.Yamazoe, Sens. Actuators B1991, 5, 7;
2. b) N. Pinna, G. Neri, M. Antonietti, M. Niederberger, Angew. Chem. Int Ed. 2004, 43, 4345.
3. a) N. Yamazoe, N. Miura, in Chemical Sensor Technology, Vol. 4(Ed: S. Yamauchi), Kodansha Ltd, Tokyo 1992, pp. 89-104;
4. b) G. J. Li, S. Kawi, Talanta 1998, 45, 759.
5. P. J. Shaver, Appl. Phys. Lett. 1967, 11, 255.
6. a) T. Suzuki, T. Yanazaki, H. Yoshioka, M. Hikichi, J. Mater. Sci. 1988, 23, 1106;
7. b) J. F. Mcaleer, P. T. Moseley, J. O. W. Noris, D. E. Williams, B. C. Tofield, J. Chem. Soc. Faraday Trans. 1, 1988, 441;
8. c) Y. Shimizu, Y. Takao, M. Egashira, J. Electrochem. Soc. 1988, 335, 2539.
9. G. Eranna, B. C. Joshi, D. P. Runthala, R. P. Gupta, Crit. Rev. Solid State Mater. Sci. 2004, 29, 111.
10. B. Stjerna, E. Olsson, C. G. Granqvist. J. Appl. Phys. 1994, 76, 3797.
11. a) J. García-Cañadas, A. P. Meacham, L M. Peter, M. D. Ward, Angew. Chem. Int. Ed. 2003, 42, 3011;
12. b) J. Rockenberger, U. zum Felde, M. Tisher, L. Troger, M. Hasse, H. Weller, J. Chem. Phys. 2000, 322, 4296;
13. c) J. R. Zhang, L. Gao, Inorg. Chem. Commun. 2004, 7, 91;
14. d) K. Sun, J. Liu, N. D. Browning, J. Catal. 2002, 205, 266;
15. e) J. Santos-Pena, T. Brousse, L. Sanchez, J. Morales, D. M. Schleich,;. Power Sources 2001, 97-98, 232;
16. f) V. Dusastre, D. E. Williams, J. Phys. Chem. B. 1998, 202, 6732;
17. g) J. P. Coleman, J. J. Freeman, P. Madhukar, J. H. Wagenkenecht, Displays 1999, 20, 145;
18. h) A. C. Bose, D. Kalpana, P. Thangadurai, S. Ramasamy, J. Power Sources 2002, 307, 138;
19. i) T. T. Emons, J. Q. Li, L. F. Nazar, J. Am. Chem. Soc. 2002, 124, 8516;
20. j) C. Goebbert, R. Nonninger, M. A. Aegerter, H. Schmidt, Thin Solid Films 1999, 352, 79;
21. k) A. Gamard, O. Babot, B. Jousseaume, M. C. Rascle, T. Toupance, G. Campet, Chem. Mater. 2000, 32, 3419;
22. l) Z. C. Orel, B. Orel, M. Hodoscek, V. Kaucic, J. Mater. Sci. 1992, 27, 313.
23. K. Chatterjee, S. Chatterjee, A. Banerjee, M. Raut, N. C. Pal, A. Sem, H. S. Malti, Mater. Chem. Phys. 2003, 83, 33.
24. a) T. R. Giraldi, M. T. Escote, A. P. Maciel, E. Longo, E. R. Leite, J. A. Varela, Thin Solid Films 2006, 535, 2678;
25. b) Q. Wan, T. H. Wang, Chem. Commun. 2005, 3841;
26. c) N. Sankara Subramanian, B. Santhi, T. Sornakumar, G. Karthik Subbaraj, C. Vinoth, G. Murugan, Ionics 2004, 30, 273;
27. d) C. J. Martinez, B. Hockey, C. B. Montgomery, S. Semancik, Langmuir 2005, 23, 7937;
28. e) C. S. Rastomjee, R. S. Dale, R.J. Schaffer, F. H. Jones, R. G. Egdell, G. C. Georgiadis, M. J. Lee, T. J. Tate, L. L. Cao, Thin Solid Films 1996, 279, 98;
29. f) M. Kugishima, K. Shimanoe, N. Yamazoe, Sens. Actuators B 2006, 118, 171.
30. a) Y. I. Korpan, M. V. Gonchar, A. A. Sibirny, C. Martelet, A. V. El'skaya, T. D. Gibson, A. P. Soldatkin, Biosens. Bioelectron. 2000, 35, 77;
31. b) K. W. Zhou, X. L Ji, N. Zhang, X. R. Zhang, Sens. Actuators B 2006, 119, 392.
32. a) L. Feng, Y. J. Liu, X. D. Zhou, J. M. Hu, I. Colloid Interface Sci. 2005,284,378;
33. b) Y. Herschkovitz, I. Eshkenazi, C. E. Campbell, J. Rishpon, J. Electroanal. Chem. 2000, 491, 182.
34. a) Y. D. Wang, C. L Ma, X. D. Sun, H. D. Li, Nanotechnology 2002, 13, 565;
35. b) B. L. Gushing, V. L Kolesnichenko, C. J. O'Connor, Chem. Rev. 2004, 104, 3893.
36. S. G. Dixit, A. R. Mahadeshwar, S. K. Haram, Colloids Surf. A1998, 133, 69.
37. A. Thomas, H. Schlaad, B. Smarsly, M. Antonietti, Langmuir 2003, 19, 4455.
38. L. B. McCusker, R. B. Von Dreele, D. E. Cox, D. Louer, P. Scardi, J. Appl. Crystallogr. 1999, 32, 36.
39. J. Rodriguez-Carvajal, FullProf, version 1.9c, LLB, CEA/Saclay, France, 2001.
40. F. Montilla, E. Morallon, A. De Battisti, S. Barison, S. Daolio, J. L. Vasquez, J. Phys. Chem. B 2004, 108, 15976.
41. J. Rockenberger, U. zum Felde, M. Tischer, L. Troger, M. Haase, H. Weller, J. Chem. Phys. 2000, 112, 4296.
42. a) L. Zhang, J. F. Hu, P. Song, H. W. Qin, X. D. Liu, M. J. Jiang, Phys. B 2005, 370, 259;
43. b) M. A. Aronova, K. S. Chang, I. Takeuchi, H. Jabs, D. Westerheim, A. Gonzalez-Martin, J. Kim, B. Lewis, Appl. Phys. Lett. 2003, 83, 1255;
44. c) J. A. Dirksen, K. Duval, T. A. Ring, Sens. Actuators B 2001, 80, 106;
45. d) C. Y. Lee, C. M. Chiang, Y. H. Wang, R. H. Ma, Sens. Actuators B 2007, 122, 503.
46. a) I. Djerdj, D. Arcon, Z. Jaglicic, M. Niederberger, J. Phys. Chem. C 2007, 111, 3614;
47. b) I. Djerdj, A. M. Tonejc, J. Alloys Compd. 2006, 413, 159.