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Volumn 279, Issue 1-2, 1996, Pages 98-105
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An investigation of doping of SnO2 by ion implantation and application of ion-implanted films as gas sensors
a a a a a b b b c |
Author keywords
Ion implantation; Sensors; Tin oxide
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Indexed keywords
BAND STRUCTURE;
CHARACTERIZATION;
CHEMICAL SENSORS;
ELECTRIC RESISTANCE;
ELECTRON ENERGY LEVELS;
ION IMPLANTATION;
PHOTOEMISSION;
SEMICONDUCTING TIN COMPOUNDS;
SEMICONDUCTOR DOPING;
TEMPERATURE;
ULTRAVIOLET SPECTROSCOPY;
X RAY SPECTROSCOPY;
AUGER DEPTH PROFILING;
SHEET RESISTANCE MEASUREMENTS;
TIN DIOXIDE;
ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY;
X RAY PHOTOEMISSION SPECTROSCOPY;
THIN FILMS;
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EID: 0030172716
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/0040-6090(95)08156-9 Document Type: Article |
Times cited : (40)
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References (27)
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