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Volumn , Issue , 2008, Pages 609-612

CMOS Integrated single electron transistor electrometry (CMOS-SET) circuit design for nanosecond quantum-bit read-out

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT DESIGNS; CMOS SOI TECHNOLOGIES; CURRENT MODES; NANO-SECONDS; OPERATION SPEEDS; POWER DISSIPATIONS; RADIO FREQUENCIES; ROOM TEMPERATURES; SINGLE ELECTRON TRANSISTORS; SPICE MODELS; SUB MICRONS; VOLTAGE MODES;

EID: 55349092667     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2008.183     Document Type: Conference Paper
Times cited : (14)

References (6)
  • 1
    • 0032557622 scopus 로고    scopus 로고
    • The Radio-Frequency Single-Electron Transistor (RF-SET): A Fast and Ultrasensitive Electrometer
    • May
    • R. J. Schoelkopf, P. Wahlgren, A. A. Kozhevnikov, P. Delsing, and D. E. Prober, "The Radio-Frequency Single-Electron Transistor (RF-SET): A Fast and Ultrasensitive Electrometer", Science, vol. 280, pp. 1238-1242, May 1998
    • (1998) Science , vol.280 , pp. 1238-1242
    • Schoelkopf, R.J.1    Wahlgren, P.2    Kozhevnikov, A.A.3    Delsing, P.4    Prober, D.E.5
  • 2
    • 17444424926 scopus 로고    scopus 로고
    • Single-Shot Read-out with the Radio Frequency Single Electron Transistor in the Presence of Charge Noise
    • April
    • T. M. Buehler, et al., "Single-Shot Read-out with the Radio Frequency Single Electron Transistor in the Presence of Charge Noise", Applied Physics Letters, vol. 86, 143117, April 2005
    • (2005) Applied Physics Letters , vol.86 , pp. 143117
    • Buehler, T.M.1
  • 3
    • 31944440585 scopus 로고    scopus 로고
    • Akira Fujiwara, a_ Hiroshi Inokawa, Kenji Yamazaki, Hideo Namatsu, and Yasuo Takahashib, Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor, Applied Physics Letters, 88, 053121, January 30, 2006
    • Akira Fujiwara, a_ Hiroshi Inokawa, Kenji Yamazaki, Hideo Namatsu, and Yasuo Takahashib, "Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor", Applied Physics Letters, vol. 88, 053121, January 30, 2006
  • 4
    • 22244482198 scopus 로고    scopus 로고
    • Silicon single-electron quantum-dot transistor switch operating at room temperature
    • March 9
    • Lei Zhuang, Lingjie Guo, and Stephen Y. Chou, "Silicon single-electron quantum-dot transistor switch operating at room temperature", Applied Physics Letters, vol. 72, pp. 1205-1207, March 9, 2007
    • (2007) Applied Physics Letters , vol.72 , pp. 1205-1207
    • Lei, Z.1    Guo, L.2    Chou, S.Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.