Structural and electronic properties of [0001] AlN nanowires: A first-principles study

Journal of Applied Physics

Volumn 104, Issue 8, 2008, Pages

  Wu, Yelong ^a   Chen, Guangde ^a   Ye, Honggang ^a   Zhu, Youzhang ^a   Wei, Su Huai ^b  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM ALLOYS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SOLID STATE PHYSICS;

ALN NANOWIRES; ATOMIC RELAXATIONS; BAND GAPS; BULK LIKES; DIRECT BAND GAPS; FORMATION ENERGIES; OPTOELECTRONIC PROPERTIES; SEMI-CONDUCTORS; SUBLINEAR; SURFACE EFFECTS; SURFACE STATES; VOLUME RATIOS;

ELECTRIC WIRE;

EID: 55249088069     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3003528     Document Type: Article

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