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Volumn 47, Issue 9 PART 2, 2008, Pages 7475-7479
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Preparation of BaTiO3 films on Si substrate with MgO buffer layer by RF magnetron sputtering
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Author keywords
BaTiO3 film; MgO buffer layer; RF magnetron sputtering
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Indexed keywords
BUFFER LAYERS;
CRYSTAL ATOMIC STRUCTURE;
DEPOSITION;
MAGNETRONS;
OPTICAL WAVEGUIDES;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DEVICES;
SILICON;
SUBSTRATES;
SURFACE ROUGHNESS;
SURFACE STRUCTURE;
THICK FILMS;
X RAY DIFFRACTION ANALYSIS;
MAGNETRON SPUTTERING;
ATOMIC FORCES;
BATIO3 FILM;
CRYSTALLINE STRUCTURES;
CRYSTALLINITY;
DEPOSITED FILMS;
DEPOSITION PARAMETERS;
DEPOSITION PRESSURES;
GAS FLOWS;
MGO BUFFER LAYER;
OPTIMUM DEPOSITION CONDITIONS;
OPTIMUM DEPOSITIONS;
RF MAGNETRON SPUTTERING;
RF POWERS;
SI SUBSTRATES;
SPUTTERING PARAMETERS;
SUBSTRATE TEMPERATURES;
AS-DEPOSITED FILMS;
FULL WIDTH AT HALF-MAXIMUM;
GAS-FLOW RATIOS;
RF-POWER;
MAGNETRON SPUTTERING;
SUBSTRATES;
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EID: 55149123564
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.7475 Document Type: Article |
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Times cited : (9)
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References (22)
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