Single layer Al-Ni-La-Si interconnections for source and drain of LTPS-TFT LCDs using direct contacts with both ITO and poly-Si

Digest of Technical Papers - SID International Symposium

Volumn 39, Issue 1, 2008, Pages 329-332

  Kugimiya, Toshihiro ^a   Yoneda, Yoichiro ^a   Kusumoto, Eisuke ^a   Gotoh, Hiroshi ^b   Ochi, Mototaka ^b   Kawakami, Nobuyuki ^b  

^a Sputtering Target Division   (Japan)

^b KOBE STEEL LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; LANTHANUM ALLOYS; METALLIC FILMS; NICKEL; POLYCRYSTALLINE MATERIALS; SILICON; THIN FILM TRANSISTORS;

AL ALLOY FILMS; CONTACT RESISTIVITIES; DIRECT CONTACT; ETCHING CHARACTERISTICS; HIGH RESOLUTION; INTERCONNECTION LINES; LTPS TFT-LCD; SOURCE AND DRAINS;

SILICON ALLOYS;

EID: 55149121263     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3069660     Document Type: Conference Paper

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