Pure Al thin film protective layer to prevent stress migration in Al wiring for thin-film transistors

Surface and Coatings Technology

Volumn 125, Issue 1-3, 2000, Pages 167-172

  Takatsuji, H ^a   Haruta, K ^b   Tsuji, S ^a   Kuroda, K ^b   Saka, H ^b  

^a IBM JAPAN LTD   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Nanoindentation techniques; Overcoated pure aluminum thin film; Sputtering; Stress migration; Thin film transistor liquid crystal displays

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; HARDNESS TESTING; METALLIC FILMS; MORPHOLOGY; NANOTECHNOLOGY; POLYCRYSTALLINE MATERIALS; SPUTTER DEPOSITION; STRESS ANALYSIS; THERMAL STRESS; THIN FILM TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

NANOINDENTATION TESTS; STRESS MIGRATION;

LIQUID CRYSTAL DISPLAYS;

ALUMINUM; ELECTRONIC EQUIPMENT; METALLIC COATING;

EID: 0034054392     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(99)00599-X     Document Type: Conference Paper

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