A 40 gbit/s transimpedance amplifier in 0.25 μm SiGe technology with ultra low power consumption

2008 17th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2008

Volumn , Issue , 2008, Pages

  Hauptmann, S ^a   Schoeniger, D ^a   Eickhoff, R ^a   Ellinger, F ^a   Scheytt, C ^b  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY; DIFFERENTIAL AMPLIFIERS; MICROWAVES; RADAR; RADIO WAVES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; TELECOMMUNICATION SYSTEMS;

40GBIT/S; AMPLIFIER CIRCUITS; CHIP AREAS; INPUT IMPEDANCES; INTEGRATED RECEIVERS; OPTICAL COMMUNICATION LINKS; POWER GAINS; SIGE TECHNOLOGIES; TRANSIMPEDANCE; TRANSIMPEDANCE AMPLIFIERS; ULTRA LOW POWERS;

OPTICAL COMMUNICATION;

EID: 55149115437     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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