Photoreceiver module using an InP HEMT transimpedance amplifier for over 40 Gb/s

IEEE Journal of Solid-State Circuits

Volumn 39, Issue 10, 2004, Pages 1690-1696

  Fukuyama, Hiroyuki ^a   Sano, Kimikazu ^a   Murata, Koichi ^a   Kitabayashi, Hiroto ^a   Yamane, Yasuro ^a   Enoki, Takatomo ^a   Sugahara, Hirohiko ^a  

^a NTT CORPORATION   (Japan)

Author keywords

InP based HEMT; Photoreceiver; Standing wave; Transimpedance amplifier (TIA); Uni traveling carrier photodiode (UTC PD)

Indexed keywords

AMPLIFIERS (ELECTRONIC); BIT ERROR RATE; HETEROJUNCTION BIPOLAR TRANSISTORS; MATHEMATICAL MODELS; NATURAL FREQUENCIES; OPTICAL COMMUNICATION; OPTIMIZATION; PHOTODIODES; SIGNAL DISTORTION; SIGNAL PROCESSING;

PHOTORECEIVERS; STANDING WAVES; TRANSIMPEDANCE AMPLIFIERS (TIA);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 5444276599     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2004.833550     Document Type: Conference Paper

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