Effects of zinc oxide and porosity on permittivity of sintered zinc sulfide-silicon dioxide

Japanese Journal of Applied Physics

Volumn 47, Issue 7 PART 1, 2008, Pages 5539-5544

  Chen, Jhewn Kuang ^a   Tang, Kai Lin ^a   Tang, Tzu Piao ^a   Chang, Jui Tung ^b  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b CHINA STEEL CORPORATION   (Taiwan)

Author keywords

Composite; Dielectric constant; Linear relationship; Thermal etching; ZnS SiO2

Indexed keywords

BUILDING MATERIALS; CERAMIC CAPACITORS; CRYSTAL GROWTH; DIELECTRIC WAVEGUIDES; GRAIN BOUNDARIES; OXIDES; PERMITTIVITY; SEMICONDUCTING ZINC COMPOUNDS; SILICA; SILICON COMPOUNDS; SINTERING; ZINC; ZINC ALLOYS; ZINC OXIDE;

COMPOSITE; DIELECTRIC CONSTANT; LINEAR RELATIONSHIP; THERMAL ETCHING; ZNS-SIO2;

ZINC SULFIDE;

EID: 55149109674     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.5539     Document Type: Article

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