Crystal structure and electrical properties of {100}-oriented epitaxial BiCoO3-BiFeO3 films grown by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 47, Issue 9 PART 2, 2008, Pages 7582-7585

  Yasui, Shintaro ^a   Naganuma, Hiroshi ^b   Okamura, Soichiro ^b   Nishida, Ken ^c   Yamamoto, Takashi ^c   Iijima, Takashi ^d   Azuma, Masaki ^e   Morioka, Hitoshi ^a,f   Saito, Keisuke ^f   Ishikawa, Mutsuo ^a   Yamada, Tomoaki ^a   Funakubo, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c NATIONAL DEFENSE ACADEMY   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^e KYOTO UNIVERSITY   (Japan)

^f BRUKER AXS INC   (United States)

Author keywords

BiCoO3 BiFeO3 solid solution; Crystal structure; Electric property; Epitaxial film; Lead free material; MOCVD

Indexed keywords

ELECTRIC PROPERTIES; EPITAXIAL FILMS; EPITAXIAL GROWTH; LEAD; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; POWDERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING BISMUTH COMPOUNDS; SOLID SOLUTIONS; STRONTIUM ALLOYS; THICK FILMS; VAPORS; ZIRCONIUM; CRYSTALLIZATION; SOLIDIFICATION; STRUCTURAL PROPERTIES;

BICOO3-BIFEO3 SOLID SOLUTION; CRYSTAL ANISOTROPIES; ELECTRICAL PROPERTIES; LEAD-FREE MATERIAL; METALORGANIC CHEMICAL VAPOR DEPOSITIONS; MOCVD; MORPHOTROPIC PHASE BOUNDARIES; REMANANT POLARIZATIONS; RHOMBOHEDRAL SYMMETRIES; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; PB(ZR ,TI)O;

CRYSTAL STRUCTURE;

EID: 55149104796     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.7582     Document Type: Article

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